61 2 3 1.05 +0.2 -0.1 be 5.45 ?.1 5.45 ?.1 2-?.2 ?.1 36.4 ?.3 9 24.4 ?.2 7 21.4 ?.3 20.0min 4.0max 0.65 +0.2 -0.1 3.0 +0.3 -0.1 6.0 ?.2 2.1 a b c silicon npn epitaxial planar transistor (complement to type 2sa1215) application : audio and general purpose symbol v cbo v ceo v ebo i c i b p c tj t stg ratings 160 160 5 15 4 150(tc=25?) 150 ?5 to +150 unit v v v a a w ? ? n absolute maximum ratings n electrical characteristics n typical switching characteristics (common emitter) external dimensions mt-200 symbol i cbo i ebo v (br)ceo h fe v ce (sat) f t c ob ratings 100 max 100 max 160 min 50 min * 2.0 max 60 typ 200 typ unit m a m a v v mhz pf conditions v cb =160v v eb =5v i c =25ma v ce =4v, i c =5a i c =5a, i b =0.5a v ce =12v, i e =?a v cb =10v, f=1mhz v cc (v) 60 r l ( ) 12 i c (a) 5 v b2 (v) ? i b2 (ma) ?00 t on ( m s) 0.2typ t stg ( m s) 1.5typ t f ( m s) 0.35typ i b1 (ma) 500 lapt 2sc2921 (ta=25?) (ta=25?) i c v ce characteristics (typical) h fe i c characteristics (typical) h fe i c temperature characteristics (typical) q j-a t characteristics i c v be temperature characteristics (typical) v ce (sat) i b characteristics (typical) pc ta derating safe operating area (single pulse) f t i e characteristics (typical) 0 3 2 1 0 0.2 0.4 0.6 1.0 0.8 base current i b (a) collector-emitter saturation voltage v ce(sat) (v) i c =10a 5a 0 15 10 5 02 1 base-emittor voltage v be (v) collector current i c (a) (v ce =4v) 125?c (case temp) 25?c ?0?c (case temp) 1 10 100 1000 2000 time t(ms) 0.1 1 2 0.5 transient thermal resistance q j-a (?c/w) 160 120 80 40 5 0 0 25 50 75 100 125 150 ambient temperature ta(?c) maximum power dissipation p c (w) with infinite heatsink without heatsink 2 10 100 200 0.3 1 0.5 10 40 5 collector-emitter voltage v ce (v) collector current i c (a) dc 10ms without heatsink natural cooling 0.02 0.1 1 0.5 10 15 10 50 100 200 collector current i c (a) dc current gain h fe (v ce =4v) typ 0 0 15 10 5 2 134 collector-emitter voltage v ce (v) collector current i c (a) 400ma 500ma 600ma 300ma 200ma 150ma 100ma 50ma i b =20ma 750ma (v ce =4v) 0.02 0.5 5 1 20 50 200 100 0.1 10 15 collector current i c (a) dc current gain h fe 125?c 25?c ?0?c ?.02 ?.1 ? ?0 0 20 40 60 80 cut-off frequency f t (mh z ) (v ce =12v) emitter current i e (a) typ weight : approx 18.4g a. part no. b. lot no. * h fe rank o(50 to 100), p(70 to 140), y(90 to 180)
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